A ω − 3 ω system is developed for the measurement of thermal conductivity of films. The capabilities of this tool have been extended to allow for the more precise measurement of highly resistive films. For the measurement of the Seebeck coefficient and electrical conductivity, a Joule Yacht MRS-3L is used allowing for measurements from 100 - 600 K.
To evaluate thin film thermoelectric materials, methods for the measurement of thermoelectric properties are developed. The power density is also increased by increasing the fill factor, and this thin film design can achieve higher fill factors compared to that of a conventional device at a specific minimum feature size. The result of simulation and modelling shows that increasing the interconnect electrical conductivity and reducing the pitch of the device increases the power density.
Tg pro 2.9.9 generator#
A new corrugated thin film thermoelectric generator design is considered and an analytical model for this is verified using finite element method simulations showing a maximum discrepancy of 15% over a wide range of parameters. To improve these devices, two main approaches can be considered, one is to improve the thermal and electrical performance of devices by carefully optimised design, and the other is to improve the materials electrical conductivity, thermal conductivity and Seebeck coefficient.
However, efficiencies of these devices are currently insufficient to be seriously considered as primary power sources and are currently only considered for small scale applications, or where this is the only option such as in radioisotope thermoelectric generators for deep space probes. These devices use no direct fuel and therefore fossil fuels to produce power and are solid state so require little maintenance. Thermoelectric generators have long been seen as a possible renewable energy source for both small scale and large scale applications. Van der Pauw measurements on the SnS2, SnS and SnSe2 films confirm their resistivities to be 2.9(9), 266(3) and 4.4(3) Ω∙cm, respectively. The morphologies, elemental compositions and crystal structures of the resulting films have been determined by scanning electron microscopy, energy dispersive X-ray spectroscopy, grazing incidence X-ray diffraction and Raman spectroscopy. In contrast, (3) gave a mixture of phases, SnS2, Sn2S3 and SnS and (4) gave SnSe2 only. At elevated temperatures the bidentate ligand precursors, (1) and (2), also form the tin monochalcogenides, SnSe and SnS, respectively. The molecular Sn(IV) complexes, (1), employed as single source precursors for the low pressure chemical vapour deposition of the corresponding tin dichalcogenide thin films.
0 kommentar(er)
